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Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

Quantized characteristics in carbon nanotube-based single-hole memory with a floating nanodot gate

(6) Ohori, Takahiro a Ohno, Yasuhide a Maehashi, Kenzo a Inoue, Koichi a Hayashi, Yutaka a,b Matsumoto, Kazuhiko a,b

a OSAKA UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHARGE STORAGE; CHARGING TIME; CHARGING VOLTAGE; FLOATING DOT; FLOATING-GATES; MEMORY EFFECTS; MEMORY OPERATIONS; NANODOTS; RETENTION TIME;

CARBON NANOTUBES; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 79958849358 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3595266 Document Type: Article

Times cited : (9)

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