Room-temperature carbon nanotube single-electron transistors fabricated using defect-induced plasma process

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 1, 2008, Pages 2036-2039

  Iwasaki, Shin ^a   Maeda, Masatoshi ^b   Kamimura, Takafumi ^a   Maehashi, Kenzo ^a   Ohno, Yasuhide ^a   Matsumoto, Kazuhiko ^a  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Carbon nanotubes; Coulomb blockade effects; Defect induced plasma process; Room temperature operation; Single electron transistors

Indexed keywords

CARBON; COULOMB BLOCKADE; DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; FABRICATION; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; PLASMAS; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; TRANSIENTS; TRANSISTORS;

CNT CHANNELS; COULOMB BLOCKADE EFFECTS; ELECTRICAL PROPERTIES; ELECTRON TRANSISTORS; GATE VOLTAGES; HIGH YIELDS; PLASMA IRRADIATIONS; PLASMA PROCESSES; PROTECTION FILMS; QUANTUM DOTS; ROOM TEMPERATURES; ROOM-TEMPERATURE OPERATION; SINGLE-ELECTRON TRANSISTORS;

CARBON NANOTUBES;

EID: 54249111447     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2036     Document Type: Article

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