Low-voltage high-stability indium-zinc oxide thin-film transistor gated by anodized neodymium-doped aluminum

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 827-829

  Lan, Linfeng ^a   Zhao, Mingjie ^a   Xiong, Nana ^a   Xiao, Peng ^a   Shi, Wen ^a   Xu, Miao ^a   Peng, Junbiao ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Al; anodize; Nd; transistor; zinc oxide

Indexed keywords

ANODIZE; ELECTRICAL STABILITY; GATE ELECTRODES; HIGH BREAKDOWN FIELDS; HIGH MOBILITY; INDIUM ZINC OXIDES; INTERFACE COUPLINGS; LOW OPERATING VOLTAGE; LOW-LEAKAGE CURRENT; LOW-VOLTAGE; OFF CURRENT; THIN-FILM TRANSISTOR (TFTS);

INDIUM; NEODYMIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; TRANSISTORS; ZINC OXIDE;

ALUMINUM;

EID: 84861683410     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2190966     Document Type: Article

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