Evaluation of Al(Nd)-alloy films for application to thin-film-transistor liquid crystal displays

IBM Journal of Research and Development

Volumn 42, Issue 3-4, 1998, Pages 501-507

  Takatsuji, H ^a,b,c,d,e   Colgan, E G ^{d,f,g,h,i,j,k,l,m}   Cabral Jr , C ^d,f,n,o,p,q   Harper, J M E ^f,r  

^a IBM JAPAN LTD   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c Semiconductor Department   (Japan)

^d IBM   (United States)

^e American Vacuum Society   (United States)

^f IBM T J WATSON RESEARCH CENTER   (United States)

^g Thin Film Transistor Proc Dept

^h Research Division

ⁱ Semiconduct R and D Center   (United States)

^j Development Center

^k CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^l Department of Obstetrics Gynecology   (United States)

^m IEEE

ⁿ PACE UNIVERSITY   (United States)

^o MANHATTAN COLLEGE   (United States)

^p POLYTECHNIC UNIVERSITY   (United States)

^q Silicon Technology Department

^r Silicon Technology Department

more..

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; ELECTROMAGNETIC DISPERSION; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; LIGHT SCATTERING; METALLIC FILMS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS (AMLCD);

LIQUID CRYSTAL DISPLAYS;

EID: 0032068205     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.423.0501     Document Type: Article

References (17)

1. W. E. Howard, "Limitations and Prospects of a-Si:H TFTs," J. SID 3, No. 3, 127 (1995).
2. W. C. O'Mara, "If You Want a Bigger FPD, Use a Bigger Substrate," Solid State Technol. 39, No. 7, 76-83 (July 1996).
3. P. Chaudhari, "Hillock Growth in Thin Films," J. Appl. Phys. 45, 4339 (1974).
4. F. Ericson, N. Kristensen, J.-A. Schweitz, and U. Smith, "A Transmission Electron Microscopy Study of Hillocks in Thin Aluminum Films," J. Vac. Sci. Technol. B 9, No. 1, 58 (1991).
5. K. Hinode, Y. Homma, and Y. Sasaki, "Whiskers Grown on Aluminum Thin Films During Heat Treatments," J. Vac. Sci. Technol. A 14, No. 4, 2570 (1996).
6. Y. K. Lee, N. Fujimura, T. Ito, and N. Nishida, "Annealing Behavior of Al-Y Alloy Film for Interconnection Conductor in Microelectronic Devices," J. Vac. Sci. Technol. B 9, No. 5, 2542 (1991).
7. S. Takayama and N. Tsutsui, "Low Resistivity Al RE (RE = La, Pr, and Nd) Alloy Thin Films with High Thermal Stability for Thin Film Transistor Interconnects," J. Vac. Sci. Technol. B 15, No. 5, 3257 (1996).
8. S. Takayama and N. Tsutsui, "Effects of Y or Gd Additions on the Structure and Resistivity of Al Thin Films," J. Vac. Sci. Technol. A 14, No. 4, 2499 (1996).
9. T. Onishi, E. Iwamura, K. Takagi, and K. Yoshikawa, "Influence of Adding Transition Metal Elements to Aluminum Target on Electrical Resistivity and Hillock Resistance in Sputter-Deposited Aluminum Alloy Thin Films," J. Vac. Sci. Technol. A 14, No. 5, 2728 (1996).
10. E. Hornbogen and U. Koster, in Recrystallization of Metallic Materials, F. Haessner, Ed., Dr. Riederer Verlag GmbH, Stuttgart, Germany, 1978, Chapter 8.
11. Binary Alloy Phase Diagrams, T. B. Massalski, Ed., ASM International, Materials Park, OH, 1990.
12. C. Lavoie, C. Cabrai, Jr., L. A. Clevenger, J. M. E. Harper, J. Jordan-Sweet, K. L. Saenger, and F. Doany, "Light Scattering Measurement of Surface Topography During Formation of Titanium Silicide," Mater. Res. Soc. Symp. Proc. 406, 163 (1996).
13. E. G. Colgan, K. P. Rodbell, C. Cabrai, Jr., and J. M. E. Harper, "Kinetics of Al Grain Growth, AlCu Precipitation, and Dissolution in Blanket Thin Films and Fine Lines," J. Appl. Phys. 76, No. 5, 2781 (1994).
14. H. Takatsuji, S. Tsuji, H. Kitahara, K. Tsujimoto, K. Kuroda, and H. Sako, "Nanocharacterization of Texture and Hillock Formation in Thin Al and Al-0.2% Cu Films for Thin-Film Transistors," Proceedings of the Symposium on Thin Films - Structure and Morphology, Boston, December 2-6, 1996, pp. 415-420.
15. J. M. E. Harper and K. P. Rodbell, "Microstructure Control in Semiconductor Metallizations," J. Vac. Sci. Technol. B 15, No. 4, 763-779 (1997).
16. E. J. Mittermeijer, A. Van Gent, and P. J. Van der Schaaf, "Analysis of Transformation Kinetics by Nonisothermal Dilatometry," Metall. Trans. A17, 1441 (1986).
17. E. J. Mittermeijer, L. Cheng, P. J. Van der Schaaf, C. M. Brakman, and B. M. Korevaar, "Analysis of Nonisothermal Transformation Kinetics; Tempering of Iron-Carbon and Iron-Nitrogen Martensites," Metall. Trans. A19, 925 (1988).