Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm

Optics Express

Volumn 20, Issue 11, 2012, Pages 12599-12609

  Casalino, Maurizio ^a   Coppola, Giuseppe ^a   Iodice, Mario ^a   Rendina, Ivo ^a   Sirleto, Luigi ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC RESISTANCE; FABRY-PEROT INTERFEROMETERS; OHMIC CONTACTS; PHOTODETECTORS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES;

1550 NM; ABSORPTION MECHANISMS; CRITICAL COUPLING CONDITION; FABRY-PEROT; FABRY-PEROT MICROCAVITIES; INTERNAL PHOTOEMISSION EFFECTS; PEAK RESPONSIVITY; SCHOTTKY DIODES; SERIES RESISTANCES;

SILICON;

SILICON;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; INTERFEROMETRY; PHOTOMETRY; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INTERFEROMETRY; MINIATURIZATION; PHOTOMETRY; SEMICONDUCTORS; SILICON;

EID: 84861521568     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.012599     Document Type: Article

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