Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

Nano Letters

Volumn 11, Issue 6, 2011, Pages 2219-2224

  Goykhman, Ilya ^a   Desiatov, Boris ^a   Khurgin, Jacob ^b   Shappir, Joseph ^a   Levy, Uriel ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b Johns Hopkins University   (United States)

Author keywords

internal photoemission; Local oxidation; Schottky detector; silicon photonics; surface plasmons

Indexed keywords

INTERNAL PHOTOEMISSION; LOCAL-OXIDATION; SCHOTTKY-DETECTOR; SILICON-PHOTONICS; SURFACE PLASMONS;

FABRICATION; NANOPHOTONICS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; OPTOELECTRONIC DEVICES; OXIDATION; PHOTODETECTORS; PHOTOEMISSION; PLASMONS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

METAL; SILICON;

ARTICLE; CHEMISTRY; INSTRUMENTATION; NANOTECHNOLOGY; OXIDATION REDUCTION REACTION; PHOTOMETRY; SEMICONDUCTOR; SURFACE PROPERTY;

METALS; NANOTECHNOLOGY; OXIDATION-REDUCTION; PHOTOMETRY; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 79958798425     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200187v     Document Type: Article

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