Thin-film schottky barrier photodetector models

IEEE Journal of Quantum Electronics

Volumn 46, Issue 5, 2010, Pages 633-643

  Scales, Christine ^a   Berini, Pierre ^b,c  

^a DEPARTMENT OF NATIONAL DEFENCE   (Canada)

^b UNIVERSITY OF OTTAWA   (Canada)

^c Spectalis Corp   (Canada)

Author keywords

Infrared; internal photoemission; photodetector; Schottky contact

Indexed keywords

BAND GAP ENERGY; BARRIER MODEL; COLD CARRIERS; DETECTION MECHANISM; DETECTOR CONFIGURATION; DOUBLE BARRIERS; EMISSION PROBABILITIES; ENERGY LOSS; INFRARED; INTERNAL PHOTOEMISSION; INTERNAL QUANTUM EFFICIENCY; METAL FILM; METAL SEMICONDUCTOR INTERFACE; MULTIPLE REFLECTIONS; OPTICAL RADIATIONS; PHENOMENOLOGICAL MODELS; RESPONSIVITY MEASUREMENTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SEMICONDUCTOR SUBSTRATE; SI DETECTORS; THIN METAL FILMS;

DETECTORS; ENERGY DISSIPATION; HOT CARRIERS; METALLIC FILMS; METALS; OPTOELECTRONIC DEVICES; PALLADIUM; PHOTODETECTORS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SUBSTRATES;

QUANTUM EFFICIENCY;

EID: 77953720564     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2046720     Document Type: Article

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