Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm: Fabrication and characterization

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Casalino, M ^a   Sirleto, L ^a   Moretti, L ^b   Gioffr M ^a   Coppola, G ^a   Rendina, Ivo ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; NONMETALS; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; PHOTOELECTRICITY; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BRAGG MIRRORS; HIGH-REFLECTIVITY; INTERNAL PHOTOEMISSION; RESONANT-CAVITY-ENHANCED PHOTODETECTORS; RESPONSIVITY; SCHOTTKY DIODES; WORKING PRINCIPLES;

PHOTODETECTORS;

EID: 46049115466     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952193     Document Type: Article

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