High mobility CMOS transistors on Si/SiGe heterostructure channels

Microelectronic Engineering

Volumn 97, Issue , 2012, Pages 26-28

  Oh, Jungwoo ^a   Jeon, Kanghoon ^b   Lee, Se Hoon ^c   Huang, Jeff ^d   Hung, P Y ^d   Ok, Injo ^d   Sassman, Barry ^d   Ko, Dae Hong ^a   Kirsch, Paul ^d   Jammy, Raj ^d  

^a Yonsei University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d SEMATECH   (United States)

Author keywords

Hetero epitaxy; Hetero structure; High mobility channel; SiGe CMOS

Indexed keywords

CMOS TRANSISTORS; HETERO-STRUCTURE; HETERO-STRUCTURE CHANNELS; HIGH MOBILITY; HIGH MOBILITY CHANNELS; HYBRID CHANNELS; PROCESS COMPLEXITY; QUANTUM MECHANICAL SIMULATIONS; RELAXED SIGE; SI CMOS; SI(1 0 0); SI/SIGE; SIGE CHANNELS; SIGE CMOS; SINGLE CHANNELS; STRAINED SI CHANNEL; STRAINED-SI;

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; QUANTUM THEORY; SILICON ALLOYS;

SILICON;

EID: 84861329002     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.02.030     Document Type: Article

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