Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 52-53

  Pantisano, L ^a   Trojman, L ^b   Mitard, J ^a   DeJaeger, B ^a   Severi, S ^a   Eneman, G ^a   Crupi, G ^c   Hoffmann, T ^a   Ferain, I ^b   Meuris, M ^a   Heyns, M ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

SHORT-CHANNEL DEVICES; SUB-100 NM; VELOCITY SATURATION; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949100953     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588560     Document Type: Conference Paper

References (8)

1. Taur, Ning, Fundamentals of Modern VLSI devices, Cambridge Press 1998;
2. Sodini et al TED 1984;
3. Severi et al, TED 2007;
4. L.Trojman et al, INFOS 2007;
5. G.Nicholas, TED 2007 p.2503;
6. Lochtfeld, Antoniadis EDL 2001 p95;
7. Coen, Muller, Sol. State El. 23 p35-40;
8. E. San Andrés, EDL 2006;