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IOP Conference Series: Materials Science and Engineering

Volumn 34, Issue 1, 2012, Pages

High mobility annealing of transparent conductive oxides

(6) Warzecha, M a Owen, J I a Wimmer, M b Ruske, F b Hotovy, J a,c Hupkes J a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b HAHN MEITNER INSTITUT (Germany)

c SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING MATERIALS; ANNEALING PROCESS; DEPOSITION CONDITIONS; DOPED ZNO; GA-DOPED; HIGH MOBILITY; HIGH TEMPERATURE ANNEALING TREATMENTS; ION-BEAM ASSISTED DEPOSITED; ITO FILMS; LOW RESISTIVITY; TIN DOPED INDIUM OXIDE; TRANSPARENT CONDUCTIVE OXIDES; ZINC MAGNESIUM OXIDE; ZNMGO:GA; ZNO; ZNO FILMS;

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALLIUM; MAGNESIUM; TIN; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84861313362 PISSN: 17578981 EISSN: 1757899X Source Type: Conference Proceeding
DOI: 10.1088/1757-899X/34/1/012004 Document Type: Conference Paper

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.