Instabilities in reactive sputtering of ZnO:Al and reliable texture-etching solution for light trapping in silicon thin film solar cells

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 1913-1917

  Hupkes J ^a   Zhu, H ^a   Owen, J I ^a   Jost, G ^a   Bunte, E ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Etching; Reactive sputtering; Thin film silicon solar cells; Zinc oxide

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; CONTROL SIGNAL; ETCH PROCESS; ETCHING BEHAVIOR; FILM PROPERTIES; FILM STRUCTURE; HCL ETCH; LIGHT-TRAPPING; METALLIC TARGETS; PROCESS STABILITY; REACTIVE SPUTTERING PROCESS; REPRODUCIBILITIES; SCATTERING PROPERTY; SILICON THIN FILM; SOLAR-CELL APPLICATIONS; SURFACE TEXTURES; THIN FILM SILICON SOLAR CELLS; ZNO; ZNO:AL FILMS;

ALUMINUM; CONVERSION EFFICIENCY; EMISSION CONTROL; ETCHING; HYDROCHLORIC ACID; HYDROFLUORIC ACID; METALLIC COMPOUNDS; METALLIC FILMS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; REACTIVE SPUTTERING; SEMICONDUCTING SILICON COMPOUNDS; TEXTURES; THIN FILMS; ZINC;

ZINC OXIDE;

EID: 84855957731     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.09.031     Document Type: Article

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