Few electron limit of n-type metal oxide semiconductor single electron transistors

Nanotechnology

Volumn 23, Issue 21, 2012, Pages

  Prati, Enrico ^a   De Michielis, Marco ^a   Belli, Matteo ^a   Cocco, Simone ^a   Fanciulli, Marco ^a,b   Kotekar Patil, Dharmraj ^c   Ruoff, Matthias ^c   Kern, Dieter P ^c   Wharam, David A ^c   Verduijn, Jan ^d,e   Tettamanzi, Giuseppe C ^d,e   Rogge, Sven ^d,e   Roche, Benoit ^f   Wacquez, Romain ^f,g   Jehl, Xavier ^f   Vinet, Maud ^g   Sanquer, Marc ^f  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c UNIVERSITY OF TÜBINGEN   (Germany)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e UNIVERSITY OF NEW SOUTH WALES   (Australia)

^f CEA GRENOBLE   (France)

^g CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION ENERGY; CHANNEL SIZES; CMOS TECHNOLOGY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; ELECTRONIC TRANSPORT; FULLY DEPLETED SILICON-ON-INSULATOR; GATE LEVELS; MASSIVE PRODUCTION; METAL OXIDE SEMICONDUCTOR; METAL OXIDES; N TYPE SILICON; PRE-INDUSTRIAL; QUANTUM VARIABLES; SILICON THICKNESS; SPIN DENSITY FUNCTIONAL THEORY; STABILITY DIAGRAM;

CMOS INTEGRATED CIRCUITS; DENSITY FUNCTIONAL THEORY; METALLIC COMPOUNDS; MOS DEVICES; SILICON WAFERS; SINGLE ELECTRON TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

METAL; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; METALS; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84860634060     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/21/215204     Document Type: Article

References (19)

1. Friesen M, Rugheimer P, Savage D E, Lagally M G, van der Weide D W, Joynt R and Eriksson M A 2003 Practical design and simulation of silicon-based quantum-dot qubits Phys. Rev. B 67 121301
2. Morton J J L, McCamey D R, Eriksson M A and Lyon S A 2011 Embracing the quantum limit in silicon computing Nature 479 34553
3. Friesen M, Chutia S, Tahan C and Coppersmith S N 2007 Valley splitting theory of SiGe/Si/SiGe quantum wells Phys. Rev. B 75 115318
4. Pauliac-Vaujour S et al 2011 Patterning strategy for monoelectronic device platform in a complementary metal oxide semiconductor technology Japan. J. Appl. Phys. 50 06GF15
5. Xiao M, House M G and Jiang H W 2010 Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots Appl. Phys. Lett. 97 32103
6. Kobayashi M, Miyaji K and Hiramoto T 2008 On the origin of negative differential conductance in ultranarrow-wire-channel silicon single-electron and single-hole transistors Japan. J. Appl. Phys. 47 1813
7. Shin S J, Jung C S, Park B J, Yoon T K, Lee J J, Kim S J, Choi J B, Takahashi Y and Hasko D G 2010 Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature Appl. Phys. Lett. 97 103101
8. Lim W H, Yang C H, Zwanenburg1 F A and Dzurak A S 2011 Spin filling of valleyorbit states in a silicon quantum dot Nanotechnology 22 335704
9. Simmons C B, Thalakulam M, Shaji N, Klein L J, Qin H, Blick R, Savage D E, Lagally M G, Coppersmith S N and Eriksson M A 2007 Single-electron quantum dot in Si/SiGe with integrated charge sensing Appl. Phys. Lett. 91 213103
10. Hofheinz M, Jehl X, Sanquer M, Molas G, Vinet M and Deleonibus S 2006 Simple and controlled single electron transistor based on doping modulation in silicon nanowires Appl. Phys. Lett. 89 143504
11. Pierre M, Wacquez R, Roche B, Jehl X, Sanquer M, Vinet M, Prati E, Belli M and Fanciulli M 2009 Compact silicon double and triple dots realized with only two gates Appl. Phys. Lett. 95 242107
12. Liu H W, Fujisawa T, Ono Y, Inokawa H, Fujiwara A, Takashina K and Hirayama Y 2008 Pauli-spin-blockade transport through a silicon double quantum dot Phys. Rev. B 77 073310
13. Lisieri M, Fiori G and Iannaccone G 2007 3d simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory J. Comput. Electron. 6 1914
14. Opensource release available at http://nanohub.org/tools/vides
15. Fiori G, Pala M G and Iannaccone G 2005 Three-dimensional simulation of realistic single electron transistors IEEE Trans. Nanotechnol. 4 415
16. Fiori G and Iannaccone G 2007 Three-dimensional simulation of one-dimensional transport in silicon nanowire transistors IEEE Trans. Nanotechnol. 6 524
17. Roche B, Voisin B, Jehl X, Wacquez R, Sanquer M, Vinet M, Deshpande V and Previtali B 2012 A tunable, dual mode field-effect or single electron transistor Appl. Phys. Lett. 100 032107
18. Pierre M, Wacquez R, Jehl X, Sanquer M, Vinet M and Cueto O 2010 Single donor ionization energies in a nanoscale cmos channel Nature Nanotechnol. 5 1337
19. Leti G, Prati E, Belli M, Petretto G, Fanciulli M, Wacquez R, Vinet M and Sanquer M 2011 Switching quantum transport in a three donors silicon fin-field effect transistor Appl. Phys. Lett. 99 242102