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Applied Physics Letters

Volumn 100, Issue 3, 2012, Pages

A tunable, dual mode field-effect or single electron transistor

(8) Roche, B a Voisin, B a Jehl, X a Wacquez, R a Sanquer, M a Vinet, M a Deshpande, V a Previtali, B a

a CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; DUAL FUNCTION; DUAL MODES; DUAL-MODE DEVICES; FIELD-EFFECT; GATE VOLTAGES; GRADUAL TRANSITION; METAL OXIDE-SEMICONDUCTOR TECHNOLOGIES; POTENTIAL GRADIENTS; SILICON ON INSULATOR;

CAPACITANCE MEASUREMENT; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS; TRANSISTORS;

SINGLE ELECTRON TRANSISTORS;

EID: 84856485062 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3678042 Document Type: Article

Times cited : (41)

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