Three-dimensional simulation of realistic single electron transistors

IEEE Transactions on Nanotechnology

Volumn 4, Issue 4, 2005, Pages 415-421

  Fiori, Gianluca ^a   Pala, Marco G ^a,b   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

^b CEA GRENOBLE   (France)

Author keywords

Poisson Schr dinger; Silicon on insulator (SOI) technology; Single electron transistors (SETs); Split gates; Three dimensional (3 D) solver

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; POISSON EQUATION; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; THREE DIMENSIONAL;

QUANTUM CONFINEMENTS; SINGLE ELECTRON TRANSISTORS (SET); SPLIT GATES; THREE DIMENSIONAL (3-D) SOLVER;

TRANSISTORS;

EID: 24344488447     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851284     Document Type: Article

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