Patterning strategy for monoelectronic device platform in a complementary metal oxide semiconductor technology

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Pauliac Vaujour, Sebastien ^a   Wacquez, Romain ^a   Vizioz, Christian ^a   Chevolleau, Thierry ^a   Pierre, Mathieu ^a   Previtali, Bernard ^a   Comboroure, Corinne ^a   Bove, Nadine ^a   Roche, Benoit ^a   Vinet, Maud ^a   Jehl, Xavier ^a   Sanquer, Marc ^a   Sixt, Pierre ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; COUPLED QUANTUM DOTS; DEEP UV; DOUBLE DOTS; HYBRID LITHOGRAPHY; QUANTUM CIRCUIT; SINGLE ELECTRON;

METALLIC COMPOUNDS; MOS DEVICES; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE ELECTRON TRANSISTORS; TRANSIENTS; TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79959437140     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GF15     Document Type: Article

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