Layered GaTe crystals for radiation detectors

IEEE Transactions on Nuclear Science

Volumn 58, Issue 4 PART 2, 2011, Pages 1981-1986

  Mandal, Krishna C ^a   Krishna, Ramesh M ^a   Hayes, Timothy C ^a   Muzykov, Peter G ^a   Das, Sandip ^a   Sudarshan, Tangali S ^a   Ma, Shuguo ^b  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

Crystal characterization; crystal growth; gallium telluride; semiconductor radiation detectors

Indexed keywords

ARGON ATMOSPHERES; CAPACITANCE VOLTAGE MEASUREMENTS; ENERGY DISPERSIVE ANALYSIS; GRAPHITE CRUCIBLES; HIGH PURITY; LAYERED CHALCOGENIDES; MONOCRYSTALLINE; NOVEL METHODS; NUCLEAR RADIATION DETECTORS; RESISTIVITY MEASUREMENT; SEMICONDUCTOR RADIATION DETECTORS; TRANSFER LENGTH METHODS; VAN DER PAUW TECHNIQUE;

ARGON; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTIVE OPTICS; HALL EFFECT; INGOTS; NUCLEAR RADIATION SPECTROSCOPY; PHASE CHANGE MEMORY; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; VANADIUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

RADIATION DETECTORS;

EID: 84860390944     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2140330     Document Type: Article

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