Layered compound semiconductor GaSe and GaTe crystals for THz applications

Materials Research Society Symposium Proceedings

Volumn 969, Issue , 2007, Pages 111-116

  Mandal, Krishna C ^a   Kang, Sung H ^a   Choi, Michael K ^a  

^a EIC LABORATORIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE CRYSTAL GROWTH; VERTICAL BRIDGMAN TECHNIQUE;

ANISOTROPY; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ENERGY GAP; SEMICONDUCTING GALLIUM COMPOUNDS;

SINGLE CRYSTALS;

EID: 40949134634     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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