Surface passivation of p-GaTe layered crystals for improved p-GaTe/n-InSe heterojunction solar cells

Materials Research Society Symposium Proceedings

Volumn 1268, Issue , 2010, Pages 77-82

  Mandal, Krishna C ^a   Das, Sandip ^a   Krishna, Ramesh ^a   Muzykov, Peter G ^a   Ma, Shuguo ^b   Zhao, Feng ^a  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON PROBE MICROANALYSIS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INDIUM COMPOUNDS; OPEN CIRCUIT VOLTAGE; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; SINGLE CRYSTALS; SOLAR CELLS; SUBSTRATES; TELLURIUM COMPOUNDS; THERMAL EVAPORATION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROJUNCTION SOLAR CELLS; NEAR STOICHIOMETRIC; PRECURSOR MATERIALS; REVERSE-SATURATION CURRENTS; SOLAR CELL EFFICIENCIES; SOLAR CELL PERFORMANCE; SURFACE PASSIVATION; VARIOUS SUBSTRATES;

NITROGEN COMPOUNDS;

EID: 78049395649     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1268-ee02-10     Document Type: Conference Paper

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