Formation and properties of stacking faults in nitrogen-doped 4H-SiC

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 338-341

  Irmscher, K ^a   Albrecht, M ^a   Rossberg, M ^a   Rost, H J ^a   Siche, D ^a   Wagner, G ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Nitrogen doping; Silicon carbide; Stacking faults

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; NITROGEN; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE;

4H-SIC CRYSTALS; DOUBLE STACKING FAULTS; NITROGEN DOPING; POTENTIAL BARRIERS;

STACKING FAULTS;

EID: 33645217480     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.087     Document Type: Conference Paper

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