Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Cui, Yunlong ^a   Caudel, David D ^a   Bhattacharya, Pijush ^a   Burger, Arnold ^a   Mandal, Krishna C ^b   Johnstone, D ^c   Payne, S A ^d  

^a FISK UNIVERSITY   (United States)

^b EIC LABORATORIES INC   (United States)

^c SEMETROL   (United States)

^d LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DOPING (ADDITIVES); GALLIUM; GRAIN BOUNDARIES; INDIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; TELLURIUM; TELLURIUM COMPOUNDS; VACANCIES; VANADIUM COMPOUNDS;

ACCEPTOR LEVELS; CAPACITANCE VOLTAGES; CURRENT VOLTAGES; DEEP LEVELS; DEEP-LEVEL TRANSIENT SPECTROSCOPIES; DEFECT COMPLEXES; DLTS SPECTRUM; ELECTRICAL AND OPTICAL PROPERTIES; INDIUM ATOMS; LOW-TEMPERATURE PHOTOLUMINESCENCES; SATURATION CURRENTS; SCHOTTKY; SCHOTTKY DIODES; SPECTROSCOPY MEASUREMENTS; VACANT SITES; VERTICAL BRIDGMAN TECHNIQUES;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 62549165413     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3080157     Document Type: Article

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