Layered III-VI chalcogenide semiconductor crystals for radiation detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7079, Issue , 2008, Pages

  Mandal, Krishna C ^a   Mertiri, Alket ^a   Pabst, Gary W ^a   Roy, Ronald G ^a   Cui, Y ^b   Battacharya, P ^b   Groza, M ^b   Burger, A ^b   Conway, Adam M ^c   Nikolic, Rebecca J ^c   Nelson, Art J ^c   Payne, Stephen A ^c  

^a EIC LABORATORIES INC   (United States)

^b FISK UNIVERSITY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Chalcogenides; GaSe; GaTe; Layered semiconductors; Radiation detectors

Indexed keywords

CARRIER CONCENTRATION; CHALCOGENIDES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; GAMMA RAYS; HALL MOBILITY; METAL CASTINGS; NEUTRON DETECTORS; PHASE CHANGE MEMORY; RADIATION DAMAGE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DETECTORS; SINGLE CRYSTALS; STARS;

CHALCOGENIDE SEMICONDUCTORS; CONTACT RESISTIVITIES; ETCHING CHARACTERISTICS; GASE; GATE; GROWN CRYSTALS; HALL-EFFECT MEASUREMENTS; HIGH PURITIES; INFRARED MICROSCOPIES; LAYERED SEMICONDUCTORS; LOW-TEMPERATURE PHOTOLUMINESCENCES; MICRO HARDNESS; MODIFIED VERTICAL BRIDGMAN TECHNIQUES; PRECURSOR MATERIALS; THROUGH CURRENTS;

RADIATION DETECTORS;

EID: 57549118171     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.796235     Document Type: Conference Paper

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