Defect-induced rigidity enhancement in layered semiconductors

Solid State Communications

Volumn 150, Issue 27-28, 2010, Pages 1200-1203

  Rak Zs ^a   Mahanti, S D ^a   Mandal, Krishna C ^b   Fernelius, N C ^c  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b The Department of Mechanical Engineering   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Ab initio; Defects in semiconductors; Electronic structure; Mechanical properties

Indexed keywords

AB INITIO; CHARGED DEFECTS; DEFECTS IN SEMICONDUCTORS; FERMI ENERGY; FORMATION ENERGIES; INTERLAYER BONDING; LARGE CLASS; LAYERED MATERIAL; LAYERED SEMICONDUCTORS; LAYERED SOLIDS; SHEAR STIFFNESS;

DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; INDIUM; RIGIDITY;

MECHANICAL PROPERTIES;

EID: 77954218210     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.04.011     Document Type: Article

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