Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications

Materials Letters

Volumn 64, Issue 3, 2010, Pages 393-395

  Nelson, A J ^a   Laurence, T A ^a   Conway, A M ^a   Behymer, E M ^a   Sturm, B W ^a   Voss, L F ^a   Nikolic, R J ^a   Payne, S A ^a   Mertiri, A ^b   Pabst, G ^b   Mandal, K C ^b   Burger, A ^c  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b EIC LABORATORIES INC   (United States)

^c FISK UNIVERSITY   (United States)

Author keywords

PL; Radiation detection; Semiconductor; XPS

Indexed keywords

CHALCOGENIDE SEMICONDUCTORS; INTERFACIAL ELECTRONIC STRUCTURE; IV CHARACTERISTICS; METAL OVERLAYERS; RADIATION DETECTION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SPECTROSCOPIC INVESTIGATIONS; SURFACE DEFECT STATE; XPS;

DETECTORS; ELECTRONIC STRUCTURE; SURFACE CHEMISTRY; SURFACE REACTIONS; TRANSPORT PROPERTIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 72049110798     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.11.027     Document Type: Article

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