SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 2, 2009, Pages

X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications

(9) Nelson, A J a Conway, A M a Sturm, B W a Behymer, E M a Reinhardt, C E a Nikolic, R J a Payne, S A a Pabst, G b Mandal, K C b

a LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

b EIC LABORATORIES INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; CHALCOGENIDE SEMICONDUCTORS; CHEMICAL SURFACES; CHEMICAL TREATMENTS; CORE-LEVEL PHOTOEMISSION; DEVICE FABRICATIONS; HIGH RESOLUTION; METAL ELECTRODES; MICROSCOPIC SURFACE; SEMI-CONDUCTOR SURFACES; SURFACE LEAKAGE CURRENTS; VOLTAGE CHARACTERISTICS; X-RAY PHOTOEMISSIONS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; LEAKAGE CURRENTS; PHOTOEMISSION; RADIATION DAMAGE; SURFACE CHEMISTRY; SURFACE TREATMENT; TRANSPORT PROPERTIES;

SURFACE PROPERTIES;

EID: 68249155034 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3176478 Document Type: Article

Times cited : (26)

References (11)

1
- 0343061025
- Single crystal growth and optical energy gap of gallium telluride
- DOI 10.1016/S0022-3697(99)00391-1
- M. Abdel Rahman and A. E. Belal, J. Phys. Chem. Solids 0022-3697 61, 925 (2000). 10.1016/S0022-3697(99)00391-1 (Pubitemid 30594981)
- (2000) Journal of Physics and Chemistry of Solids , vol.61 , Issue.6 , pp. 925-929
- Abdel Rahman, M.¹ Belal, A.E.²

2
- 48349135304
- in IEEE Nuclear Science Symposium Conference Record,. NSS '07, Vol., 10.1109/NSSMIC.2007.4437294
- A. M. Conway, C. E. Reinhardt, R. J. Nikolic, A. J. Nelson, T. F. Wang, K. J. Wu, S. A. Payne, A. Mertiri, G. Pabst, R. Roy, K. C. Mandal, P. Bhattacharya, Y.-L. Cui, M. Groza, and A. Burger, in IEEE Nuclear Science Symposium Conference Record, 2007. NSS '07, Vol. 2, pp. 1551-1555. 10.1109/NSSMIC.2007.4437294
- (2007) , vol.2 , pp. 1551-1555
- Conway, A.M.¹ Reinhardt, C.E.² Nikolic, R.J.³ Nelson, A.J.⁴ Wang, T.F.⁵ Wu, K.J.⁶ Payne, S.A.⁷ Mertiri, A.⁸ Pabst, G.⁹ Roy, R.¹⁰ Mandal, K.C.¹¹ Bhattacharya, P.¹² Cui -, Y.L.¹³ Groza, M.¹⁴ Burger, A.¹⁵

3
- 55649116411
- 0169-4332,. 10.1016/j.apsusc.2008.07.002
- H. Hasegawa and M. Akazawa, Appl. Surf. Sci. 0169-4332 255, 628 (2008). 10.1016/j.apsusc.2008.07.002
- (2008) Appl. Surf. Sci. , vol.255 , pp. 628
- Hasegawa, H.¹ Akazawa, M.²

4
- 0031482162
- X-ray photoemission analysis of chemically treated I-III-VI semiconductor surfaces
- DOI 10.1116/1.580608
- A. J. Nelson, C. R. Schwerdtfeger, G. C. Herdt, D. King, M. Contreras, and K. Ramanathan, J. Vac. Sci. Technol. A 0734-2101 15, 2058 (1997). 10.1116/1.580608 (Pubitemid 127098724)
- (1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.15 , Issue.4 , pp. 2058-2062
- Nelson, A.J.¹ Schwerdtfeger, C.R.² Herdt, G.C.³ King, D.⁴ Contreras, M.⁵ Ramanathan, K.⁶ O'Brien, W.L.⁷

5
- 0033075743
- 0169-4332,. 10.1016/S0169-4332(98)00597-2
- A. J. Nelson, L. Gregoratti, E. Chagarov, D. Lonza, M. Marsi, and M. Kiskinova, Appl. Surf. Sci. 0169-4332 140, 208 (1999). 10.1016/S0169-4332(98) 00597-2
- (1999) Appl. Surf. Sci. , vol.140 , pp. 208
- Nelson, A.J.¹ Gregoratti, L.² Chagarov, E.³ Lonza, D.⁴ Marsi, M.⁵ Kiskinova, M.⁶

6
- 0001103612
- Study of oxidized cadmium zinc telluride surfaces
- DOI 10.1116/1.580719
- K. -T. Chen, D. T. Shi, H. Chen, B. Granderson, M. A. George, W. E. Collins, and A. Burger, J. Vac. Sci. Technol. A 0734-2101 15, 850 (1997). 10.1116/1.580719 (Pubitemid 127082020)
- (1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.15 , Issue.3 NUMBER 1 , pp. 850-853
- Chen, K.-T.¹ Shi, D.T.² Chen, H.³ Granderson, B.⁴ George, M.A.⁵ Collins, W.E.⁶ Burger, A.⁷ James, R.B.⁸

7
- 24144458242
- A novel two-step chemical passivation process for CdZnTe detectors
- DOI 10.1088/0268-1242/20/5/003
- S. Wenbin, W. Kunshu, M. Jiahua, T. Jianyong, Z. Qi, and Q. Yongbiao, Semicond. Sci. Technol. 0268-1242 20, 343 (2005). 10.1088/0268-1242/20/5/003 (Pubitemid 41237321)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.5 , pp. 343-346
- Sang, W.¹ Wang, K.² Min, J.³ Teng, J.⁴ Zhang, Q.⁵ Qian, Y.⁶

8
- 34548243252
- 2-HI-citric acid
- DOI 10.1007/s11664-007-0166-9
- V. G. Ivanits'ka, P. Moravec, J. Franc, Z. F. Tomashik, P. I. Feychuk, V. M. Tomashik, L. P. Shcherbak, K. Masek, and P. Hoschl, J. Electron. Mater. 0361-5235 36, 1021 (2007). 10.1007/s11664-007-0166-9 (Pubitemid 47319327)
- (2007) Journal of Electronic Materials , vol.36 , Issue.8 , pp. 1021-1024
- Ivanits'ka, V.G.¹ Moravec, P.² Franc, J.³ Tomashik, Z.F.⁴ Feychuk, P.I.⁵ Tomashik, V.M.⁶ Shcherbak, L.P.⁷ Masek, K.⁸ Hoschl, P.⁹

9
- 33646807459
- 0.1Te crystal
- DOI 10.1016/j.nima.2006.02.006, PII S0168900206002324
- L. Qiang and J. Wanqi, Nucl. Instrum. Methods Phys. Res. A 0168-9002 562, 468 (2006). 10.1016/j.nima.2006.02.006 (Pubitemid 43767817)
- (2006) Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , vol.562 , Issue.1 , pp. 468-471
- Qiang, L.¹ Wanqi, J.²

10
- 56349160058
- 0167-577X,. 10.1016/j.matlet.2008.09.051
- A. J. Nelson, A. M. Conway, C. E. Reinhardt, J. L. Ferreira, R. J. Nikolic, and S. A. Payne, Mater. Lett. 0167-577X 63, 180 (2009). 10.1016/j.matlet.2008.09.051
- (2009) Mater. Lett. , vol.63 , pp. 180
- Nelson, A.J.¹ Conway, A.M.² Reinhardt, C.E.³ Ferreira, J.L.⁴ Nikolic, R.J.⁵ Payne, S.A.⁶

11
- 33644677560
- XPS study of InTe and GaTe single crystals oxidation
- DOI 10.1016/j.matchemphys.2005.07.055, PII S0254058405005079
- O. A. Balitskii and W. Jaegermann, Mater. Chem. Phys. 0254-0584 97, 98 (2006). 10.1016/j.matchemphys.2005.07.055 (Pubitemid 43332950)
- (2006) Materials Chemistry and Physics , vol.97 , Issue.1 , pp. 98-101
- Balitskii, O.A.¹ Jaegermann, W.²

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