Theoretical studies of defect states in GaTe

Journal of Physics Condensed Matter

Volumn 21, Issue 1, 2009, Pages

  Rak, Zs ^a   Mahanti, S D ^a   Mandal, Krishna C ^b   Fernelius, Nils C ^c  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b EIC LABORATORIES INC   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP REGIONS; DEEP DEFECTS; DEFECT STATE; DENSITY FUNCTIONAL; ELECTRONIC STRUCTURE CALCULATIONS; FIRST PRINCIPLES; FORMATION ENERGIES; INTRINSIC DEFECTS; POINT SHIFTS; SPIN-ORBIT INTERACTIONS; SUBSTITUTIONAL IMPURITIES; SUPERCELL MODELS; THEORETICAL STUDIES; TRANSITION LEVELS;

ATOMS; BAND STRUCTURE; BINDING ENERGY; DEFECT DENSITY; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; GALLIUM; GERMANIUM; IMPURITIES; SUBSTITUTION REACTIONS; TELLURIUM COMPOUNDS; TIN; VACANCIES;

DEFECT STRUCTURES;

EID: 63849284009     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/1/015504     Document Type: Article

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