Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

Surface Science

Volumn 602, Issue 17, 2008, Pages 2936-2942

  Nie, S ^a   Lee, C D ^a   Feenstra, R M ^a   Ke, Y ^b   Devaty, R P ^b   Choyke, W J ^b   Inoki, C K ^c   Kuan, T S ^c   Gu, Gong ^d  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d SARNOFF CORPORATION   (United States)

Author keywords

Atomic force microscopy; Silicon carbide; Step formation and bunching

Indexed keywords

ATOMIC FORCE MICROSCOPY; SILICON CARBIDE; STEP FORMATION AND BUNCHING; UNIT CELLS;

SURFACES;

EID: 51249114962     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.07.021     Document Type: Article

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