Investigation of graphite particle inclusions in 6H-SiC single crystals grown by sublimation boule growth technique

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 47-50

  Nishiguchi, T ^a   Nakamura, M ^a   Isshiki, T ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Defect generation mechanism; Graphite particle; HRTEM; Sublimation boule growth

Indexed keywords

ARGON; CONCENTRATION (PROCESS); CRYSTAL GROWTH; INCLUSIONS; INTERFACES (MATERIALS); PYROMETERS; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBLIMATION; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL QUALITY; DEFECT GENERATION MECHANISM; MICROPIPES; SUBLIMATION BOULE GROWTH;

GRAPHITE;

EID: 8644245925     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.47     Document Type: Conference Paper

References (3)

1. Y.M. Tairov and V.F. Tsvetkov: J. Cryst. Growth Vol. 43 (1978), p. 209.
2. D. Hofmann, M. Bickermann, R. Eckstein, M. Kolbl, St.G. Muller, E. Schmitt, A. Weber, A. Winnacke: J. Cryst. Growth Vols. 198-199 (1999), p. 1005.
3. T. Kimoto, A. Ito, and H. Matsunami: J. Appl. Phys. Vol. 81 (1997), p. 3494.