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Volumn 520, Issue 14, 2012, Pages 4595-4599

Molecular beam epitaxy growth of BaTiO3 thin films and crucial impact of oxygen content conditions on the electrical characteristics

Author keywords

BaTiO3; Ferroelectric oxides; Molecular beam epitaxy; Rectifying behavior; Thin film

Indexed keywords

ATOMIC OXYGEN; BATIO; CRITICAL THICKNESS; ELECTRICAL CHARACTERISTIC; ELEVATED OXYGEN PRESSURE; FERROELECTRIC CHARACTERISTICS; FERROELECTRIC OXIDES; HIGH QUALITY; MICROSCOPIC MEASUREMENT; NB-DOPED SRTIO; OXYGEN CONTENT; OXYGEN PARTIAL PRESSURE; RECTIFICATION BEHAVIOR; RECTIFYING BEHAVIORS; SRTIO; STRAIN-FREE; VACANCY DENSITY;

EID: 84860294185     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.182     Document Type: Conference Paper
Times cited : (28)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.