Fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7789-7798

  Du, Xiaofeng ^a   Chen, I Wei ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000838110     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367953     Document Type: Article

References (31)

1. F. P. Gnadinger, IEEE, VLSI and Computer Peripherals, 1, 20 (1989).
2. S. S. Eaton, D. B. Butler, M. Parris, D. Wilson, and H. McNeillie, IEEE Solid State Circuits Conference, 1988 (unpublished), Vol. 329, p. 130.
3. D. Bondurant and F. Gnadinger, IEEE Spectr. 7, 30 (1989).
4. R. Moazzami, C. Hu. and W. H. Shepherd, Technical Digest-International Electron Devices Meeting, IEEE Service Center, Piscataway. NJ, 1990 (unpublished), p. 417.
5. D. P. Vijay and S. B. Desu, J. Electrochem. Soc. 140, 2640 (1993).
6. B. A. Tuttle, H. N. AI-Shareef, W. L. Warren, M. V. Raymond, T. J. Headley, J. A. Voigt, J. Evans, and R. Ramesh, Microelectron. Eng. 29, 223 (1995).
7. I. K. Yoo and S. B. Desu, Mater. Sci. Eng., B 13, 319 (1992).
8. W. L. Warren, D. Dimos, B. A. Tuttle, and D. M. Smyth, J. Am. Ceram. Soc. 77, 2753 (1994).
9. S. D. Bernstein, T. Y, Wong, Y. Kisler, and R. W. Tustison, J. Mater. Res, 8, 12 (1993).
10. T. Nakmura, Y. Nako, Q. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys., Part 1 33, 5207 (1994).
11. B. A. Tuttle, H. N. Al-Shareef, W. L. Warren, M. V. Raymond, T. J. Headley, J. A. Voigt, J. Evans, and R. Ramesh, Microelectron. Eng. 29, 223 (1995).
12. C. Bjormander, A. M. Grishin, B. M. Moon, J. Lee, and K. V. Rao, Appl. Phys. Lett. 64, 3646 (1994).
13. R. Ramesh, T. Sands, V. G. Keramidas, and D. K. Fork, Mater. Sci. Eng., B 22, 283 (1994).
14. W. L. Warren, D. Dimos, B. A. Tuttle, and D. M. Smyth, J. Am. Ceram. Soc. 77, 2753 (1994).
15. W. L. Warren, D. Dimos, B. A. Tuttle, R. D. Nasby, and G. E. Pike, Appl, Phys. Lett. 65, 1018 (1994).
16. B. Jiang, J. Kim, R. Khamankar, I. Lee, and J. C. Lee, Mater. Res. Soc. Symp. Proc. 361, 85 (1995).
17. S. Y. Wu, IEEE Transactions, ED-21, 499 (1974).
18. P. Li and T.-M. Lu, Phys. Rev. B 43, 14 261 (1991).
19. T. S. Kalkur, G. Argos, and L. Kammerdiner, Mater. Res. Soc. Symp. Proc, 200, 313 (1990).
20. A. Masuda, Y. Yamanaka, M. Tazoe, Y. Yonezawa, A. Morimoto, and T, Shimizu, Jpn. J. Appl. Phys., Part 1 34, 5154 (1995).
21. X. Du and I.-W. Chen, J. Am. Ceram. Soc. (to be published).
22. P. Wurfel, I. P. Batra, and J. T. Jacobs, Phys. Rev. Lett. 30, 1218 (1973).
23. I. P. Batra, P. Wurfel, and B. D. Silverman, Phys. Rev. B 8, 3257 (1973).
24. A. V. Dixit, N. R. Rajopadhye, and S. V. Bhoraskar, J. Mater. Sci. 21, 2798 (1986).
25. S. M. Sze, Physics of Semiconductors, 2nd ed. (Wiley, New York. 1981).
26. A. V. Dixit, N. R. Rajopadhye, and S. V. Bhoraskar, J. Mater. Sci. 21, 2798 (1986).
27. M. Pan, S. Park, C. W. Park, K. A. Markowski, S. Yoshikawa, and C. A. Randall, J. Am. Ceram. Soc. 79, 2971 (1996).
28. I. K. Yoo, S. B. Desu, and J. Xing, Mater. Res. Soc. Symp. Proc. 310, 165 (1993).
29. U. Robels and G. Arlt, J. Appl. Phys. 73, 3454 (1993).
30. J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed. (Wiley, New York, 1982).
31. W. Y. Pan, C. F. Yue, K. W. Lin, S. Sun, and B. A. Tuttle, J. Mater. Sci. Lett. 12, 986 (1993).