Domain configuration and phase transition for BaTiO3 thin films on tensile Si substrates

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5327-5330

  Qiao, Liang ^a   Bi, Xiaofang ^a  

^a BEIHANG UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A3. Physical vapor deposition processes; B1. Barium compounds; B1. Rare earth compounds; B2. Ferroelectric materials

Indexed keywords

BARIUM; BARIUM COMPOUNDS; CRYSTAL STRUCTURE; ELECTROMAGNETIC WAVES; FERROELECTRIC MATERIALS; FERROELECTRICITY; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSCOPIC EXAMINATION; PHASE TRANSITIONS; RARE EARTH COMPOUNDS; RARE EARTH ELEMENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPACE OPTICS; SUBSTRATES; SUPERCONDUCTING TRANSITION TEMPERATURE; TENSILE STRAIN; THICK FILMS;

A1. CRYSTAL STRUCTURE; A3. PHYSICAL VAPOR DEPOSITION PROCESSES; B1. BARIUM COMPOUNDS; B1. RARE EARTH COMPOUNDS; B2. FERROELECTRIC MATERIALS;

LATTICE CONSTANTS;

EID: 56949104212     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.170     Document Type: Article

References (27)

1. Scott J.F. Science 315 (2007) 954
2. Dkhil B., Defay E., and Guillan J. Appl. Phys. Lett. 90 (2007) 022908
3. Choi K.J., Biegalski M., Li Y.L., Sharan A., Schubert J., Uecker R., Reiche P., Chen Y.B., Pan X.Q., Gopalan V., Chen L.Q., Schlom D.G., and Eom C.B. Science 306 (2004) 1005
4. Li Y.L., and Chen L.Q. Appl. Phys. Lett. 88 (2006) 072905
5. Yoneda Y., Okabe T., Sakaue K., Terauchi H., Kasatani H., and Deguchi K. J. Appl. Phys. 83 (1998) 2458
6. Dieguez O., Tinte S., Antons A., Bungaro C., Neaton J.B., Rabe K.M., and Vanderbilt D. Phys. Rev. B 69 (2004) 212101
7. Lai B.K., Kornev I.A., Bellaiche L., and Salamo G.J. Appl. Phys. Lett. 86 (2005) 132904
8. Misirlioglu I.B., Alpay S.P., He F., and Wells B.O. J. Appl. Phys. 99 (2006) 104103
9. Balzar D., Ramakrishnan P.A., and Hermann A.M. Phys. Rev. B 70 (2004) 092103
10. Kim H.J., Oh S.H., and Jang H.M. Appl. Phys. Lett. 75 (1999) 3195
11. Mi S.B., Jia C.L., Heeg T., Trithaveesak O., Schubert J., and Urban K. J. Crystal Growth 283 (2005) 425
12. Lee K.S., Choi J.H., Lee J.Y., and Baik S. J. Appl. Phys. 90 (2001) 4095
13. Auciello O., Scott J.F., and Ramesh R. Phys. Today 51 7 (1998) 22
14. Levy J. Phys. Rev. A 64 (2001) 052306
15. Zhang X.D., Meng X.J., Sun J.L., Lin T., Ma J.H., Chu J.H., Kwon D.Y., Kim C.W., and Kim B.G. Thin Solid Films 516 (2008) 919
16. Kim G.H., Kim D.P., Kim K.T., Kim C.I., Lee C.I., and Kim T.H. Thin Solid Films 506-507 (2006) 217
17. Qiao L., and Bi X.F. J. Crystal Growth 310 (2008) 2780
18. Rafique M.S., and Tahir N. Vacuum 81 (2007) 1062
19. Wang D.Y., Wang Y., Zhou X.Y., Chan H.L.W., and Choy C.L. Appl. Phys. Lett. 86 (2005) 212904
20. Fork D.K., Ponce F.A., Tramontana J.C., and Geballe T.H. Appl. Phys. Lett. 58 (1991) 2294
21. Lee M.-B., Kawasaki M., Yoshimoto M., and Koinuma H. Appl. Phys. Lett. 66 (1995) 1331
22. Touloukian Y.S., Kirby R.K., Taylor R.E., and Lee T.Y.R. Thermal Expansion, Nonmetallic Solids, Thermophysical Properties of Matter 13 (1977), Plenum, New York
23. Peng L.S.J., Xi X.X., Moeckly B.H., and Alpay S.P. Appl. Phys. Lett. 83 (2003) 4592
24. Qiao L., and Bi X.F. Appl. Phys. Lett. 92 (2008) 062912
25. Pertsev N.A., Koukhar V.G., Waser R., and Hoffmann S. Integrated Ferroelect. 32 (2001) 235
26. Pertsev N.A., and Koukhar V.G. Phys. Rev. Lett. 84 (2000) 3722
27. Pertsev N.A., Zembilgotov A.G., Hoffmann S., Waser R., and Tagantsev A.K. J. Appl. Phys. 85 (1999) 1698