|
Volumn 91, Issue 21, 2007, Pages
|
Forward tunneling effect and metal-insulator transition in the BaTi O3 film/Si n-n heterojunction
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BARIUM COMPOUNDS;
ELECTRON TUNNELING;
HETEROJUNCTIONS;
SEMICONDUCTING SILICON;
THERMAL EFFECTS;
ELECTRICAL VOLTAGE;
JUNCTION RESISTANCE;
SILICON SUBSTRATES;
METAL INSULATOR TRANSITION;
|
EID: 36348940373
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2817936 Document Type: Article |
Times cited : (14)
|
References (15)
|