메뉴 건너뛰기




Volumn 91, Issue 21, 2007, Pages

Forward tunneling effect and metal-insulator transition in the BaTi O3 film/Si n-n heterojunction

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; ELECTRON TUNNELING; HETEROJUNCTIONS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

EID: 36348940373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817936     Document Type: Article
Times cited : (14)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.