Alternative high-k dielectrics for semiconductor applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 209-213

  Van Elshocht, S ^a   Adelmann, C ^a   Clima, S ^a   Pourtois, G ^a   Conard, T ^a   Delabie, A ^a   Franquet, A ^a   Lehnen, P ^a,d   Meersschaut, J ^a   Menou, N ^a   Popovici, M ^a   Richard, O ^a   Schram, T ^a   Wang, X P ^a   Hardy, A ^b,c   Dewulf, D ^b   Van Bael, M K ^b   Blomberg, T ^e   Pierreux, D ^f   Swerts, J ^f   Maes, J W ^f   Wouters, D J ^a   De Gendt, S ^a   Kittl, J A ^a   more..

^a IMEC   (Belgium)

^b HASSELT UNIVERSITY   (Belgium)

^c PHL University College   (Belgium)

^d AIXTRON AG   (Germany)

^e ASM Michrochemistry   (Finland)

^f ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; DYSPROSIUM; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; INDUSTRIAL MANAGEMENT; LOGIC GATES; MATERIALS; METALLIC COMPOUNDS; MOS DEVICES; OZONE WATER TREATMENT; PEROVSKITE; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TECHNOLOGICAL FORECASTING; THRESHOLD VOLTAGE; VOLTAGE REGULATORS;

ALTERNATIVE DIELECTRICS; CA-P LAYERS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; CRYSTALLINE PHASE; DYNAMIC RANDOM ACCESS MEMORIES; EQUIVALENT-OXIDE THICKNESS; GATE STACK OPTIMIZATIONS; GATE STACKS; HIGH - K DIELECTRICS; HIGH-K GATE DIELECTRICS; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; K DIELECTRICS; K VALUES; LEAKAGE CURRENT DENSITIES; MATERIAL CHARACTERISTICS; SEMICONDUCTOR APPLICATIONS; THEORETICAL MODELING; THRESHOLD VOLTAGE CONTROLS;

GATE DIELECTRICS;

EID: 59949095335     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3025855     Document Type: Article

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