Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Lin, Y C ^a,b   Yamaguchi, H ^b,c   Chang, E Y ^a   Hsieh, Y C ^a   Ueki, M ^d   Hirayama, Y ^b,c,e   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NTT Basic Research Laboratories   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d NTT CORPORATION   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; ELECTRONICS INDUSTRY; HIGH ELECTRON MOBILITY TRANSISTORS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BUFFER LAYERS; CRYSTALLINE QUALITY; EPITAXIAL STRUCTURES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33846218621     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431567     Document Type: Article

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