Experimental study of degradation in 4H-SiC BJTs by means of electrical characterization and electroluminescence

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1037-1040

  Farese, Luca ^a   Malm, Gunnar ^a   Domeij, Martin ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; Degradation; Electroluminescence; Stacking faults

Indexed keywords

DEGRADATION; ELECTROLUMINESCENCE; INFRARED DEVICES; STACKING FAULTS;

4H-SIC; BASAL PLANE DISLOCATIONS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PERFORMANCE; ELEVATED TEMPERATURE; HIGH VOLTAGE APPLICATIONS; NEAR-INFRARED RANGE; TRANSISTOR STRUCTURE;

SILICON CARBIDE;

EID: 77955457764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1037     Document Type: Conference Paper

References (5)

1. R. Ghandi, H.-S. Lee, M. Domeij, B. Buono, C.-M. Zetterling, and M. Östling, IEEE Electron Device Letters, Vol. 29 (2008), p. 1135 doi:10.1109/LED.2008.2004419.
2. S. Krishnaswami, A. Agarwal, J. Richmond, T. P. Chow, B. Geil, K. Jones, and C. Scozzie, Proceedings of The 18th International Symposium on Power Semiconductor Devices ICs, Naples, Italy (2006), p. 1.
3. A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett., Vol. 81 (2002), p. 883-5 doi:10.1063/1.1496498.
4. H. Jacobson, J.P. Bergman, C. Hallin, E. Janzen, T. Tuomi, H Lendenmann, J. Appl. Phys., Vol. 95 (2004), p. 1485-8 doi:10.1063/1.1635996.
5. J. D. Caldwell, R. E. Stahlbush, K. D. Hobart, O. J. Glembocki, and K. X. Liu, Appl. Phys. Lett., Vol. 90 (2002), p. 143519-1 doi:10.1063/1.2719650.