Vertical SiC JFET model with unified description of linear and saturation operating regions

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 2306-2312

  Chen, Zhiyang ^a   Grekov, Alexander ^a   Fu, Ruiyun ^a   Santi, Enrico ^a   Hudgins, Jerry ^b   Mantooth, Alan ^c   Sheridan, David ^d   Casady, Jeff ^d  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF ARKANSAS   (United States)

^d SemiSouth Laboratories Inc   (United States)

Author keywords

JFET switches; Power semiconductor devices; Silicon carbide JFETs

Indexed keywords

CONDUCTION MODE; CURRENT SATURATION; FIELD-DEPENDENT MOBILITY; FINITE ELEMENT SIMULATIONS; JUNCTION FIELD EFFECT TRANSISTORS; OPERATING REGIONS; PHYSICS-BASED; POWER SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; UNIFIED DESCRIPTION;

ENERGY CONVERSION; FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SIMULATORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449186627     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5316268     Document Type: Conference Paper

References (7)

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7. A. Grekov, Z. Chen, E. Santi, J. Hudgins, A. Mantooth, D. Sheridan and J. Casady, "Parameter Extraction Procedure for High Power SiC JFET," Energy Conversion Congress and Exposition, ECCE 2009, Sept. 2009, in press