4H-SiC DMOSFETs for power conversion applications: Successes and ongoing challenges

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 197-200

  Hull, Brett ^a   Zhang, Jon ^a   Das, Mrinal ^a   Ryu, Sei Hyung ^a   Jonas, Charlotte ^a   Dhar, Sarit ^a   Haney, Sarah ^a   Callanan, Robert ^a   Richmond, Jim ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN ELECTRIC FIELD; DEVICE DESIGN; FABRICATION PROCESS; HIGH BANDGAP; HIGH THERMAL CONDUCTIVITY; MATERIAL QUALITY; POWER CONVERSION; POWER DENSITIES; POWER DEVICES; POWER ELECTRONIC DEVICES;

COOLING SYSTEMS; ELECTRIC EQUIPMENT; ELECTRIC FIELDS; FABRICATION; MATERIALS PROPERTIES; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE;

ELECTRON DEVICES;

EID: 77957572577     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551909     Document Type: Conference Paper

References (5)

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3. E. Ö. Sveinbjörnsson et al., Mater. Sci. Forum, 556-557, 487 (2007).
4. F. Fukuda et al., Appl. Phys. Lett., 84, 2088 (2004).
5. H. Yano et al, Appl. Phys. Lett., 78, 374 (2001).