Parameter extraction procedure for high power SiC JFET

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 1466-1471

  Grekov, Alexander ^a   Chen, Zhiyang ^a   Santi, Enrico ^a   Hudgins, Jerry ^b   Mantooth, Alan ^c   Sheridan, David ^d   Casady, Jeff ^d  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF ARKANSAS   (United States)

^d SemiSouth Laboratories Inc   (United States)

Author keywords

JFET switches; Parameter extraction; Power semiconductor devices; Silicon carbide JFETs

Indexed keywords

C-V MEASUREMENT; CURRENT CAPABILITY; DRIFT REGIONS; DYNAMIC CHARACTERISTICS; EMPIRICAL TEMPERATURES; GEOMETRICAL PARAMETERS; HIGH-POWER; IN-CHANNELS; IV CHARACTERIZATION; JFET SWITCHES; JUNCTION FIELD EFFECT TRANSISTORS; MODEL ACCURACY; POWER SEMICONDUCTOR DEVICES; STEP-BY-STEP;

BIOACTIVITY; CARRIER CONCENTRATION; ENERGY CONVERSION; FIELD EFFECT TRANSISTORS; PARAMETER EXTRACTION; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

CARRIER MOBILITY;

EID: 72449164016     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5316253     Document Type: Conference Paper

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