|
Volumn 679-680, Issue , 2011, Pages 587-590
|
1200V SiC JFET in cascode light configuration: Comparison versus Si and SiC based switches
|
Author keywords
Body diode; Free wheeling diode; FWD; Normally on JFET; SiC transistor
|
Indexed keywords
CASCODE AMPLIFIERS;
DIODES;
INSULATED GATE BIPOLAR TRANSISTORS (IGBT);
JUNCTION GATE FIELD EFFECT TRANSISTORS;
MOSFET DEVICES;
PHOTOVOLTAIC CELLS;
SYSTEMS ENGINEERING;
BODY DIODE;
FREEWHEELING DIODES;
MONOLITHICALLY INTEGRATED;
NORMALLY ON;
OUTPUT CHARACTERISTICS;
PHOTOVOLTAIC SYSTEMS;
SIC TRANSISTORS;
SPECIFIC-ON RESISTANCE;
SILICON CARBIDE;
|
EID: 79955133082
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.679-680.587 Document Type: Conference Paper |
Times cited : (10)
|
References (7)
|