A low noise pixel architecture for scientific CMOS monolithic active pixel sensors

IEEE Transactions on Nuclear Science

Volumn 57, Issue 5 PART 1, 2010, Pages 2490-2496

  Coath, Rebecca E ^a   Crooks, Jamie P ^a   Godbeer, Adam ^a   Wilson, Matthew D ^a   Zhang, Zhige ^a   Stanitzki, Marcel ^a   Tyndel, Mike ^a   Turchetta, Renato A D ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

4T pixel; active pixel sensors; CMOS image sensors; high resistivity epitaxial layer; image sensors; low noise image sensor; pinned photodiode; radiation hardness; random telegraph signal noise

Indexed keywords

4T PIXEL; ACTIVE PIXEL SENSORS; CMOS IMAGE SENSOR; HIGH RESISTIVITY EPITAXIAL LAYER; LOW-NOISE IMAGES; PINNED PHOTODIODE; RADIATION HARDNESS; RANDOM TELEGRAPH SIGNAL NOISE;

ARCHITECTURE; DIGITAL CAMERAS; EPITAXIAL GROWTH; HARDNESS; IMAGE SENSORS; PHOTODIODES; SIGNAL NOISE MEASUREMENT; TELEGRAPH;

PIXELS;

EID: 79953814425     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2052469     Document Type: Article

References (17)

1. R. Turchetta, "CMOS sensors for the detection of minimum ionising particles," in Proc. IEEE Workshop on Charge-Coupled Devices and Image Sensors, Lake Tahoe, NV, Jun. 7-9, 2001, pp. 7-9.
2. J. Ballin, R. Coath, J. Crooks, P. Dauncey, B. Levin, M. Lynch, A.-M. Magnan, Mikami, M. Noy, O. Miller, V. Rajovic, M. Stanitzki, K. Stefanov, R. Turchetta, M. Tyndel, N. Watson, E. Villani, and J. Wilson, "Amonolithic active pixel sensor for a "Tera-Pixel" ECAL at the ILC," in Proc. Topical Workshop Electronics for Particle Physics, Naxos, Greece, Sep. 15-19, 2008, pp. 63-69.
3. G. Deptuch, M. Winter, W. Dulinski, D. Husson, R. Turchetta, and J. Riester, "Simulation and measurements of charge collection in monolithic active pixel sensors," Nucl. Instrum. Methods Phys. Res. A, vol. A465, no. 1, pp. 92-100, 2001. (Pubitemid 32543694)
4. G. Agranov, V. Berezin, and R. Tsai, "Crosstalk and microlens study in a color CMOS image sensor," IEEE Trans. Electron Devices, vol. 50, no. 1, pp. 4-11, 2003.
5. J. Ballin, J. Crooks, P. Dauncey, A. Magnan, Y. Mikami, O. Miller,M. Noy, V. Rajovic, M. Stanitzki, K. Stefanov, R. Turchetta, M. Tyndel, E. Villani, N. Watson, and J. Wilson, "Monolithic active pixel sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels," Sensors, vol. 8, no. 9, pp. 5336-5351, 2008.
6. R. Turchetta, G. Villani, and M. Prydderch, "Accelerated particle and high energy radiation sensor," U.S. Patent 10/556 028 (app.), Dec. 6, 2004.
7. R. Coath, J. Crooks, A. Godbeer, M. Wilson, and R. Turchetta, "Advanced pixel architectures for scientific image sensors," in Proc. Topical Workshop Electronics for Particle Physics, Paris, France, Sep. 21-25, 2009, pp. 57-61.
8. O. Kononchuk, "High resistivity silicon waferwith thick epitaxial layer and method of producing same," U.S. Patent 10/008 440 (app.), May 7, 2001.
9. A. Holmes-Siedle and L. Adams, Handbook of Radiation Effects. New York: Oxford Univ. Press, 2002.
10. W. Chen, G. De Geronimo, Z. Li, P. O'Connor, V. Radeka, P. Rehak, G. Smith, and B. Yu, "Active pixel sensors on high-resistivity silicon and their readout," IEEE Trans. Nucl. Sci., vol. 49, no. 3, pp. 1006-1011, Jun. 2002. (Pubitemid 35312236)
11. R. Guidash, T. Lee, P. Lee, D. Sackett, C. Drowley, M. Swenson, L. Arbaugh, R. Hollstein, F. Shapiro, and S. Domer, "A 0.6 m CMOS pinned photodiode color imager technology," in Proc. Technical Digest IEEE Electron Device Meeting,Washington, DC, Dec. 7-10, 1997, pp. 927-929.
12. C. Leyris, F. Martinez, M. Valenza, A. Hoffmann, J. Vildeuil, F. Roy, and C. STMicroelectronics, "Impact of random telegraph signal in CMOS image sensors for low-light levels," in Proc. 32nd Euro. Solid-State Circuits Conf., Montreux, Switzerland, Sep. 18-22, 2006, pp. 376-379.
13. A. Lahav, D. Veinger, A. Fenigstein, and A. Shiwalkar, "Optimization of random telegraph noise non uniformity in a CMOS pixel with a pinned-photodiode," in Proc. Int. Image Sensor Workshop , Ogunquit, ME, Jun. 7-10, 2007, pp. 230-233.
14. J. Janesick, Photon Transfer: DN-)[lambda] 2007, Society of Photo- Optical Instrumentation Engineers.
15. X. Wang, P. R. Rao, and A. J. P. Theuwissen, "Fixed-pattern noise induced by transmission gate in pinned 4T CMOS image sensor pixels," in Proc. 32nd Euro. Solid-State Circuits Conf.,Montreux, Switzerland, Sep. 18-22, 2006, pp. 331-334. (Pubitemid 351278324)
16. X. Wang, P. Rao, A. Mierop, and A. Theuwissen, "Random telegraph signal in CMOS image sensor pixels," in Proc. Technical Digest IEEE Int. Electron Devices Meeting, San Francisco, CA, Dec. 11-13, 2006, pp. 1-4.
17. The SPiDeR (Silicon Pixel Detector R&D) Collaboration [Online]. Available: http://www.spider.ac.uk