The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

IEEE Transactions on Electron Devices

Volumn 51, Issue 2, 2004, Pages 178-184

  Kwon, Hyuck In ^a   Kang, In Man ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Park, Sang Sik ^b  

^a Seoul National University   (South Korea)

^b Sejong University   (South Korea)

Author keywords

CMOS active pixel sensor (APS); Dark signals; Deep level bulk traps; Floating diffusion node; Photodiode; Shallow trench isolation (STI); Transfer gate; White pixels

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

ACTIVE PIXEL SENSORS; DARK CURRENTS SPECTROSCOPY; DARK SIGNALS; FLOATING DIFFUSION NODE; SHALLOW TRENCH ISOLATION; THERMAL GENERATION VELOCITY; WHITE PIXELS;

IMAGE SENSORS;

EID: 0442279708     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821765     Document Type: Article

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