Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 347-349

  Mheen, Bongki ^a,b   Song, Young Joo ^c   Theuwissen, Albert J P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Korea China Semiconductor IT Association   (China)

Author keywords

CMOS image sensor (CIS); Dark current; Four transistor pixel; Hole accumulation diode; Imager; Pinned photodiode (PPD); Well capacity

Indexed keywords

DARK CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); IMAGE SENSORS; PHOTODIODES; PIXELS; VOLTAGE CONTROL;

FOUR-TRANSISTOR PIXEL; HOLE ACCUMULATION DIODE; PINNED PHOTODIODE; WELL CAPACITY;

CMOS INTEGRATED CIRCUITS;

EID: 41749086903     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917812     Document Type: Article

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