Evaluation of 10MeV proton irradiation on 5.5 Mpixel scientific CMOS image sensor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7826, Issue , 2010, Pages

  Vu, Paul ^a   Fowler, Boyd ^a   Rodricks, Brian ^a   Balicki, Janusz ^a   Mims, Steve ^a   Li, Wang ^a  

^a Fairchild Imaging   (United States)

Author keywords

10MeV Proton Irradiation; CMOS image sensor; Displacement Damage; Radiation Hardened by Design; Single Event Effects; Total Ionizing Dose

Indexed keywords

10MEV PROTON IRRADIATION; CMOS IMAGE SENSOR; DISPLACEMENT DAMAGES; RADIATION HARDENED BY DESIGN; SINGLE EVENT EFFECTS; TOTAL IONIZING DOSE;

ANALOG TO DIGITAL CONVERSION; DIGITAL CAMERAS; DIGITAL CONTROL SYSTEMS; HARDENING; IMAGE SENSORS; IONIZING RADIATION; PIXELS; PROTON IRRADIATION; PROTONS; RADIATION HARDENING;

RADIATION EFFECTS;

EID: 78649576507     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.868160     Document Type: Conference Paper

References (4)

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2. Bogaerts, J., Dierickx, B., Meynants, G., Uwaerts, D., "Total Dose and Displacement Damage Effects in a Radiation-Hardened CMOS APS", IEEE Transactions on Electron Devices, Vol 50, No. 1, Jan 2003
3. Scheick, S., Novak, F., "Hot Pixel Generation in Active Pixel Sensors: Dosimetric and Microdosimetric response", Radiation and its Effects on Component and Systems, Noorwikj, Netherlands, September, 2003
4. Fowler, B., Liu, C., Mims, S., Balicki, J., Li, W., Do, H., Appelbaum, J., Vu, P., "A 5.5Mpixel 100 Frames/sec Wide Dynamic Range Low Noise CMOS Image Sensor for Scientific Applications", Proc. of SPIE-IS&T Electronic Imaging, SPIE Vol. 7536, 2010