Molecular beam epitaxy of BaSi 2 thin films on Si(001) substrates

Journal of Crystal Growth

Volumn 345, Issue 1, 2012, Pages 16-21

  Toh, Katsuaki ^a   Hara, Kosuke O ^b,c   Usami, Noritaka ^b,c   Saito, Noriyuki ^d   Yoshizawa, Noriko ^d   Toko, Kaoru ^a   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting silicon compounds; B3. Solar cells

Indexed keywords

ELECTRON BACK SCATTER DIFFRACTION; EPITAXIAL RELATIONSHIPS; FOUR-FOLD SYMMETRY; GRAIN SIZE; LARGE LATTICE MISMATCH; SI (001) SUBSTRATE; SI(0 0 1); STRAIN-FREE; STRUCTURE AND MORPHOLOGY; X-RAY RECIPROCAL SPACE MAPPING;

ATOMIC FORCE MICROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

EID: 84857664585     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.049     Document Type: Article

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