Characterization of Cu(InGa)Se2 grain boundary properties by electron- and tip-probe methods

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7347-7350

  Oonishi, Satoshi ^a   Kawamura, Masahiro ^a   Takano, Naoaki ^b   Hashimoto, Daisuke ^b   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Cu(InGa)Se2; EBIC; EBSD; Grain boundary; SSRM; TEM

Indexed keywords

BOUNDARY PROPERTY; CDS; EBIC; EBSD; ELECTRON BACK SCATTER DIFFRACTION; ELECTRON-BEAM-INDUCED CURRENT; LOW RESISTIVITY; MINORITY CARRIER; RANDOM GRAIN BOUNDARIES; SCANNING SPREADING RESISTANCE MICROSCOPY; SOLAR CELL PERFORMANCE; SSRM; TRANSMISSION ELECTRON MICROSCOPE;

COPPER; DIFFRACTION; ELECTRIC CURRENTS; ELECTRON BEAMS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SEMICONDUCTING SELENIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONS;

EID: 80052165530     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.223     Document Type: Conference Paper

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