Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Shin, Jin Wook ^a   Cho, Won Ju ^a   Choi, Chel Jong ^b   Jang, Moongyu ^c  

^a Kwangwoon University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; DANGLING BONDS; ERBIUM; EXCIMER LASERS; GAS LASERS; GAS PERMEABLE MEMBRANES; GRAIN BOUNDARIES; PHASE INTERFACES; PLATINUM; POLYSILICON; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; SUGAR (SUCROSE); THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

ELECTRICAL CHARACTERISTICS; ERBIUM SILICIDES; EXCIMER LASER ANNEALING; FORMING GAS ANNEALING; GAS AMBIENT; HIGH QUALITIES; INTERFACE TRAP STATE; LOW-LEAKAGE CURRENTS; METALLIC JUNCTIONS; N CHANNELS; ON/OFF CURRENT RATIOS; PLATINUM SILICIDES; POLY-CRYSTALLINE SILICONS; POLY-SI; POLYCRYSTALLINE SILICON (POLYSI); SCHOTTKY BARRIER THIN-FILM TRANSISTORS; SI FILMS; SOURCE/DRAIN JUNCTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59849094763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073047     Document Type: Article

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