Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors

Thin Solid Films

Volumn 520, Issue 5, 2011, Pages 1427-1431

  Hsieh, Tien Yu ^a   Chang, Ting Chang ^a   Chen, Te Chih ^a   Tsai, Ming Yen ^b   Lu, Wei Hsiang ^a   Chen, Shih Cheng ^c   Jian, Fu Yen ^a   Lin, Chia Sheng ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Indium Gallium Zinc Oxide (IGZO); Light illumination; N 2O plasma treatment; Thin film transistors (TFTs)

Indexed keywords

ACTIVE LAYER; DEPOSITION PROCESS; ENERGY BAND; GATE INSULATOR; INDIUM GALLIUM ZINC OXIDES; LIGHT ILLUMINATION; NEGATIVE BIAS; PASSIVATION LAYER; PHOTOGENERATED HOLES; PLASMA TREATMENT; RECOVERY RATE; SUBTHRESHOLD LEAKAGE CURRENT; THIN FILM TRANSISTORS (TFTS); TRAP STATE;

DEPOSITION; GALLIUM; LEAKAGE CURRENTS; PASSIVATION; PLASMA DEPOSITION; PLASMA STABILITY; PLASMAS; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

PLASMA DIAGNOSTICS;

EID: 82755194857     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.002     Document Type: Conference Paper

References (15)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature (London) 432 2004 488
2. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins Adv. Mater. (Weinheim Ger) 17 2005 590
3. H.N. Lee, J. Kyung, S.K. Kang, D.Y. Kim, M.C. Sung, S.J. Kim, C.N. Kim, H.G. Kim, and S.T. Kim Tech. Dig. SID, California, USA 2007 1826
4. R. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono J. Soc. Inf. Display 15 11 2007 915
5. S.Y. Huang, T.C. Chang, M.C. Chen, S.C. Chen, C.T. Tsai, M.C. Hung, C.H. Tu, C.H. Chen, J.J. Chang, and W.L. Liau Electrochem. Solid State Lett. 14 4 2011 H177
6. Y.C. Chen, T.C. Chang, H.W. Li, S.C. Chen, J. Lu, W.F. Chung, Y.H. Tai, and T.Y. Tseng Appl. Phys. Lett. 96 2010 262104
7. K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko Appl. Phys. Lett. 97 2010 192103
8. T.C. Chen, T.C. Chang, C.T. Tsai, T.Y. Hsieh, S.C. Chen, C.S. Lin, M.C. Hung, C.H. Tu, J.J. Chang, and P.L. Chen Appl. Phys. Lett. 97 2010 112104
9. T.C. Chen, T.C. Chang, T.Y. Hsieh, W.S. Lu, F.Y. Jian, C.T. Tsai, S.Y. Huang, and C.S. Lin Appl. Phys. Lett. 99 2011 022104
10. J.K. Jeong, H.W. Yang, J.H. Jeong, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 93 2008 123508
11. T.C. Chen, T.C. Chang, T.Y. Hsieh, C.T. Tsai, S.C. Chen, C.S. Lin, M.C. Hung, C.H. Tu, J.J. Chang, and P.L. Chen Appl. Phys. Lett. 97 2010 192103
12. H. Ohara, T. Sasaki, K. Noda, S. Ito, M. Sasaki, Y. Endo, S. Yoshitomi, J. Sakata, T. Serikawa, and S. Yamazaki Jpn. J. Appl. Phys. 49 2010 03CD02
13. J. Park, S. Kim, C. Kim, S. Kim, I. Song, H. Yin, K.K. Kim, S. Lee, K. Hong, J. Lee, J. Jung, E. Lee, K.W. Kwon, and Y. Park Appl. Phys. Lett. 93 2008 053505
14. Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao Solid State Electron. 54 2010 1392
15. K. Remashan, D.K. Hwang, S.D. Park, J.W. Bae, G.Y. Yeom, S.J. Park, and J.H. Jang Solid-State Lett. 11 2008 H55