Schottky barrier N-type thin film transistors with polycrystalline silicon channel and Er-silicided metallic junctions

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1336-1339

  Shin, Jin Wook ^a   Choi, Chel Jong ^b   Jang, Moongyu ^c   Cho, Won Ju ^a  

^a Kwangwoon University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Er silicide; Forming gas annealing (FGA); Metallic junction; Poly Si Schottky barrier TFT (SB TFT)

Indexed keywords

ERBIUM; METALLIC SOAPS; PHOSPHORUS; POLYSILICON; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

DRIVE CURRENTS; ELECTRICAL CHARACTERISTICS; ER SILICIDE; FORMING GAS ANNEALING; FORMING GAS ANNEALING (FGA); FORMING GASSES; METALLIC JUNCTION; METALLIC JUNCTIONS; ON/OFF CURRENT RATIOS; POLY-SI SCHOTTKY BARRIER TFT (SB-TFT); POLYCRYSTALLINE SILICONS; SCHOTTKY BARRIERS; SILICIDATION; SOURCE/DRAIN REGIONS; SUBTHRESHOLD SWINGS;

GAS PERMEABLE MEMBRANES;

EID: 57049146283     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2007511     Document Type: Article

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