Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  Lee, Keun Woo ^a   Heo, Kon Yi ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC PROPERTIES; GALLIUM; INDIUM; LIGHT SENSITIVE MATERIALS; OPTOELECTRONIC DEVICES; PHOTOSENSITIVITY; SIGNAL TO NOISE RATIO; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

DEEP-LEVEL DEFECTS; INDIUM GALLIUM ZINC OXIDES; OPTICAL AND ELECTRICAL PROPERTIES; SIGNAL-TO-NOISE RATIOS; ULTRA-VIOLET PHOTODETECTORS;

CARBON NANOTUBES;

EID: 62549121253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3098406     Document Type: Article

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