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Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

Impurity-limited mobility and variability in gate-all-around silicon nanowires

(3) Niquet, Yann Michel a Mera, Hector a,b Delerue, Christophe c

a L Sim (France)

b AIX MARSEILLE UNIVERSITÉ (France)

c INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT IMPURITIES; ELECTRONS AND HOLES; GATE OXIDE; GATE-ALL-AROUND; INVERSION MODES; MAJORITY CARRIERS; MINORITY CARRIER; P-TYPE; SILICON NANOWIRES; STRUCTURAL PARAMETER;

IMPURITIES; NANOWIRES;

SILICON;

EID: 84859790942 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4704174 Document Type: Review

Times cited : (23)

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